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Light emission in silicon nanostructures

Par Conseil national de recherches du Canada

DOITrouver le DOI : https://doi.org/10.1117/12.452153
AuteurRechercher : 1
Affiliation
  1. Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
FormatTexte, Article
ConférenceOptical Properties of Nanocrystals, 9-11 July 2002, Seattle, Washington, USA
Résumé
The many and diverse approaches to materials science problems have greatly enhanced our ability in recent times to engineer the physical properties of semiconductors. Silicon, of all semiconductors, underpins nearly all microelectronics today and will continue to do so for some time to come. However, in optoelectronics, the severe disadvantage of an indirect band gap has limited the application of elemental silicon. Here we review a number of diverse approaches to engineering efficient light emission in silicon nanostructures. These different approaches are placed in context and their prospects for application in silicon-based optoelectronics are assessed.
Date de publication
Dans
  • Optical Properties of Nanocrystals (5 novembre 2002) : 1–12.
Série
  • Proceedings of SPIE 4808.
Langueanglais
Numéro NPARC12346474
Exporter la noticeExporter en format RIS
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Identificateur de l’enregistrement16d1632c-a8fb-40cc-8902-dd65947698be
Enregistrement créé2009-09-17
Enregistrement modifié2020-03-30
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