| Téléchargement | - Voir le manuscrit accepté : Structure and thermal stability of MOCVD ZrO2 films on Si (1 0 0) (PDF, 780 Kio)
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| DOI | Trouver le DOI : https://doi.org/10.1016/S0022-0248(03)00827-3 |
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| Auteur | Rechercher : Wu, X.1; Rechercher : Landheer, D.1; Rechercher : Graham, M. J.1; Rechercher : Chen, H. -W.; Rechercher : Huang, T. -Y.; Rechercher : Chao, T. -S. |
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| Affiliation | - Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | interfaces; transmission electron microscopy; metalorganic chemical vapor deposition; dielectric materials |
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| Résumé | The structure and thermal stability of ZrO2 films grown on Si (1 0 0) substrates by metalorganic chemical vapor deposition have been studied by high-resolution transmission electron microscopy, selected area electron diffraction and X-ray energy dispersive spectroscopy. As-deposited films consist of tetragonal ZrO2 nanocrystallites and an amorphous Zr silicate interfacial layer. After annealing at 850°C, some monoclinic phase is formed, and the grain size is increased. Annealing a ∼6 nm thick film at 850°C in O2 revealed that the growth of the interfacial layer is at the expense of the ZrO2 layer. In a 3.0 nm thick Zr silicate interfacial layer, there is a 0.9 nm Zr-free SiO2 region right above the Si substrate. These observations suggest that oxygen reacted with the Si substrate to grow SiO2, and SiO2 reacted with ZrO2 to form a Zr silicate interfacial layer during the deposition and annealing. Oxygen diffusion through the tetragonal ZrO2 phase was found to be relatively easier than through the monoclinic phase. |
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| Date de publication | 2003-04 |
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| Dans | |
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| Langue | anglais |
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| Numéro NPARC | 12744381 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 124c559a-94e1-4397-bb76-a1c5c50b3b12 |
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| Enregistrement créé | 2009-10-27 |
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| Enregistrement modifié | 2020-04-02 |
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