| Téléchargement | - Voir la version finale : Robust silicon waveguide polarization rotator with an amorphous silicon overlayer (PDF, 1.2 Mio)
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| DOI | Trouver le DOI : https://doi.org/10.1109/JPHOT.2014.2306827 |
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| Auteur | Rechercher : Xiong, Yule1; Rechercher : Xu, Dan-Xia1; Rechercher : Schmid, Jens H.1; Rechercher : Cheben, Pavel1Identifiant ORCID : https://orcid.org/0000-0003-4232-9130; Rechercher : Janz, Siegfried1; Rechercher : Ye, Winnie N. |
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| Affiliation | - Conseil national de recherches du Canada. Technologies de l'information et des communications
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| Format | Texte, Article |
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| Sujet | silicon waveguide; polarization rotation; amorphous silicon |
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| Résumé | We propose a robust polarization rotator based on the mode-evolution mechanism. The polarization rotation in a silicon wire waveguide is achieved by forming an amorphous silicon (a-Si) overlayer and an SiO₂ spacer on top of the waveguide. A strip pattern of a constant width is designed to be etched through the overlayer at a specific angle with respect to the Si waveguide. The asymmetry in the a-Si overlayer affects the waveguide mode by rotating the modal axis. This polarization rotator design is amenable to comparatively simple fabrication compatible with standard silicon photonic processing for integration. The length of the rotation section is 17 μm, and the broadband operation is achieved with a rotation efficiency higher than 90% for a wavelength range exceeding 135 nm. A maximum polarization rotation efficiency of 99.5% is predicted by calculation. |
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| Date de publication | 2014-02-15 |
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| Maison d’édition | IEEE |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 23000127 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 074e2b6a-a806-4ef9-bedd-b4de6211f546 |
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| Enregistrement créé | 2016-06-06 |
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| Enregistrement modifié | 2020-06-02 |
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