| Téléchargement | - Voir le manuscrit accepté : Annealing effects on the chemical configuration of uncapped and (poly-Si)-capped HfOxNy film deposited on Si(001) (PDF, 877 Kio)
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| DOI | Trouver le DOI : https://doi.org/10.1149/1.1939087 |
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| Auteur | Rechercher : Couillard, M.; Rechercher : Lee, M. -S.; Rechercher : Landheer, D.1; Rechercher : Wu, X.1; Rechercher : Botton, G. A. |
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| Affiliation | - Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | hafnium compounds; silicon compounds; transmission electron microscopy; thermal stability |
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| Résumé | We use spatially resolved spectroscopy in a scanning transmission electron microscope to study the thermal stability of the HfOxNy/Si(001) system with and without an in situ capping layer of silicon. The films were deposited by metallorganic chemical vapor deposition using the amide precursor tetrakis(diethylamido)hafnium with NO as the oxidant. A SiOxNy interfacial layer (∼1.8nm) is observed at the HfOxNy/substrate interface for films directly exposed to air. In addition, the N loss in the HfOxNy film for the uncapped sample is significant. In contrast, in situ capping is found to reduce the thickness of the interfacial layer and to keep the N content in the final dielectric film high. The capped HfOxNy films are quasi-amorphous, whereas uncapped films are polycrystalline following exposure to air. Oxinitridation at both interfaces is observed following a rapid thermal annealing process (900°C in N2 for 30s ) of the capped HfOxNy film. However, the interfacial layers remain thin (∼1nm) and a significant amount of N is present in the HfOxNy film. The rapid thermal annealing leads to the partial crystallization of the HfOxNy film and the Si capping layer. No Hf silicate is detected on a scale of ∼6Å in the electron energy loss spectroscopy analysis. |
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| Date de publication | 2005 |
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| Dans | |
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| Langue | anglais |
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| Numéro NPARC | 12744780 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 049edb26-8881-4602-9212-cab32a256223 |
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| Enregistrement créé | 2009-10-27 |
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| Enregistrement modifié | 2020-04-07 |
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