| DOI | Trouver le DOI : https://doi.org/10.1149/1.2764459 |
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| Auteur | Rechercher : Chen, J. -H.; Rechercher : Lei, T. -F.; Rechercher : Landheer, Dolf1; Rechercher : Wu, X.1; Rechercher : Liu, J.; Rechercher : Chao, T. -S. |
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| Affiliation | - Conseil national de recherches du Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Résumé | Si-nanocrystal memories have been fabricated using the thermal agglomeration of an ultrathin (0.9–3.5 nm) amorphous Si (a-Si) film. The a-Si was deposited by electron beam evaporation followed by in situ annealing at 850°C for 5 min. Hemispherical nanocrystals were obtained with a dot density up to 3.9 X 1011 cm−2, and a stored charge density of 4.1 X 1012 cm−2 (electron + hole) was achieved. The data retention characteristics of nanocrystal-embedded devices have shown a 1 V memory window after 100 h. Well-separated Si nanocrystals with a 23–32% surface-coverage ratio have been successfully demonstrated. The process compatibility of the proposed technique was also discussed. |
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| Date de publication | 2007 |
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| Dans | |
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| Numéro NPARC | 12744828 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 03f66d8e-d8a9-4e01-9485-a0ccf3b7e852 |
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| Enregistrement créé | 2009-10-27 |
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| Enregistrement modifié | 2020-05-10 |
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