| DOI | Trouver le DOI : https://doi.org/10.1063/1.1492306 |
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| Auteur | Rechercher : Boukherroub, Rabah1; Rechercher : Wayner, Danial D. W.1; Rechercher : Lockwood, David J.2 |
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| Affiliation | - Conseil national de recherches Canada
- Conseil national de recherches Canada. Institut des sciences des microstructures du CNRC
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| Format | Texte, Article |
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| Sujet | silicon; elemental semiconductors; porous semiconductors; photoluminescence; oxidation; anodisation; organic compounds; surface chemistry; infrared spectra; raman spectra; passivation; anodizing; electrochemical oxidation; hydrogen bonds; infrared spectra; porosity; porous materials; porous silicon; semiconductors (materials); surface reactions; surface treatment |
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| Résumé | Electrochemical oxidation of porous silicon (PSi) produces a surface that is covered with native silicon–hydrogen (Si–Hx) bonds and regions with oxidized Si–Si back-bonds (OSi–Hx). Such anodically oxidized PSi layers were chemically modified using 1-decene under thermal conditions. The hydrosilylation reaction consumes mainly the nonoxidized Si–Hx bonds and yields a surface with oxidized and alkylated regions that were characterized using transmission IR and Raman spectroscopies. The brightest photoluminescence (PL) was obtained when the PSi sample was anodized in 1 M sulfuric acid (H₂SO₄) at 3 mA/cm² for 5 min. The chemical process preserves the PL and the physical properties of the porous layer. The derivatized PSi surfaces are stable in boiling CCl4 and in water. |
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| Date de publication | 2002-07 |
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| Dans | |
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| Langue | anglais |
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| Publications évaluées par des pairs | Oui |
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| Numéro NPARC | 12744334 |
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| Exporter la notice | Exporter en format RIS |
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| Signaler une correction | Signaler une correction (s'ouvre dans un nouvel onglet) |
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| Identificateur de l’enregistrement | 01e98361-db0a-4c0e-8b64-d4f727a8850b |
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| Enregistrement créé | 2009-10-27 |
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| Enregistrement modifié | 2020-03-30 |
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