AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors Using Oxide Insulator Grown by Photoelectrochemical Oxidation Method
AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors Using Oxide Insulator Grown by Photoelectrochemical Oxidation Method
| DOI | Resolve DOI: https://doi.org/10.1109/EDSSC.2007.4450115 |
|---|---|
| Author | Search for: ; Search for: ; Search for: ; Search for: 1; Search for: 1; Search for: 2 |
| Affiliation |
|
| Format | Text, Article |
| Publication date | 2008 |
| In | |
| NPARC number | 12744231 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | f565daf3-7dd6-489c-a698-b3052390bc97 |
| Record created | 2009-10-27 |
| Record modified | 2020-04-15 |
Page details
From:
- Date modified: