Modeling RF MOSFETs after Electrical Stress using Low-Noise Microstrip Line Layout
Modeling RF MOSFETs after Electrical Stress using Low-Noise Microstrip Line Layout
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| Format | Text, Article |
| Conference | Radio Frequency Integrated Circuits Symposium 2005, 2005 |
| NPARC number | 12346730 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | f4077f52-a64c-498a-8dda-ff4510cdafed |
| Record created | 2009-09-17 |
| Record modified | 2020-04-16 |
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