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Modeling RF MOSFETs after Electrical Stress using Low-Noise Microstrip Line Layout

From National Research Council Canada

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Affiliation
  1. National Research Council Canada. NRC Institute for Microstructural Sciences
FormatText, Article
ConferenceRadio Frequency Integrated Circuits Symposium 2005, 2005
NPARC number12346730
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Record identifierf4077f52-a64c-498a-8dda-ff4510cdafed
Record created2009-09-17
Record modified2020-04-16
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