| Alternative title | Gate-controlled quantum dots in monolayer WSe2 |
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| Download | - View final version: Gate-controlled quantum dots in monolayer WSe₂ (PDF, 2.1 MiB)
- View supplementary information: Gate-controlled quantum dots in monolayer WSe₂ (PDF, 793 KiB)
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| DOI | Resolve DOI: https://doi.org/10.1063/5.0062838 |
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| Author | Search for: Boddison-Chouinard, Justin; Search for: Bogan, Alex1; Search for: Fong, Norman2ORCID identifier: https://orcid.org/0000-0001-5727-2953; Search for: Watanabe, KenjiORCID identifier: https://orcid.org/0000-0003-3701-8119; Search for: Taniguchi, Takashi; Search for: Studenikin, Sergei1ORCID identifier: https://orcid.org/0000-0002-7712-7187; Search for: Sachrajda, Andrew1; Search for: Korkusinski, Marek1; Search for: Altintas, AbdulmenafORCID identifier: https://orcid.org/0000-0002-9677-5403; Search for: Bieniek, MaciejORCID identifier: https://orcid.org/0000-0003-4505-1998; Search for: Hawrylak, Pawel; Search for: Luican-Mayer, AdinaORCID identifier: https://orcid.org/0000-0001-9537-4600; Search for: Gaudreau, Louis1ORCID identifier: https://orcid.org/0000-0002-1929-2715 |
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| Affiliation | - National Research Council of Canada. Security and Disruptive Technologies
- National Research Council of Canada. Advanced Electronics and Photonics
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| Format | Text, Article |
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| Subject | quantum computing; quantum information; 2D materials; heterostructures; Coulomb blockade; quantum confinement; quantum state; field effect transistors; quantum dots; semiconductors |
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| Abstract | Quantum confinement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as well as the possibility to address their quantum states electrically and optically, makes two-dimensional (2D) transition metal dichalcogenides an emerging platform for the development of quantum devices. In this work, we fabricate devices based on heterostructures of layered 2D materials, in which we realize gate-controlled tungsten diselenide (WSe₂) hole quantum dots. We discuss the observed mesoscopic transport features related to the emergence of quantum dots in the WSe₂ device channel, and we compare them to a theoretical model. |
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| Publication date | 2021-09-28 |
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| Publisher | AIP |
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| Licence | |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | ef4b3b40-79c9-4eed-b850-0c3852e4927e |
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| Record created | 2022-02-18 |
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| Record modified | 2022-02-22 |
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