Design of thin InGaAsN(Sb) n - i - p junctions for use in four-junction concentrating photovoltaic devices

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DOIResolve DOI: http://doi.org/10.1117/1.JPE.7.022502
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  1. National Research Council Canada. Advanced Electronics and Photonics
TypeArticle
Journal titleJournal of Photonics for Energy
ISSN1947-7988
Volume7
Issue2
Article number022502
Pages# of pages: 9
Abstract
Publication date
PublisherSociety of Photo-optical Instrumentation Engineers
LanguageEnglish
Peer reviewedYes
NPARC number23002690
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Record identifiere7c07e6d-fdaa-432b-9de5-1d417eac1341
Record created2017-12-20
Record modified2018-04-11
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