Inelastic light scattering spectroscopy in si/SiGe nanostructures: strain, chemical composition and thermal properties

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DOIResolve DOI: https://doi.org/10.1016/j.ssc.2016.07.008
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Name affiliation
  1. National Research Council Canada. Information and Communication Technologies
  2. National Research Council Canada. Measurement Science and Standards
FormatText
TypeArticle
Journal titleSolid State Communications
ISSN0038-1098
1879-2766
SubjectNanostructures; Molecular Beam Epitaxy; Inelastic Light Scattering; Raman Scattering
Abstract
We present a review of recent studies of inelastic light scattering spectroscopy in two types of Si/SiGe nanostructures: planar superlattices and cluster (dot) multilayers including first- and second-order Raman scattering, polarized Raman scattering and low-frequency inelastic light scattering associated with folded acoustic phonons. The results are used in semi-quantitative analysis of chemical composition, strain and thermal conductivity in these technologically important materials for electronic and optoelectronic devices.
Publication date
PublisherElsevier
LanguageEnglish
In pressYes
Peer reviewedYes
NPARC number23000477
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Record identifiere7469215-77b6-45da-b380-175305bd4da2
Record created2016-07-22
Record modified2019-03-12
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