| DOI | Resolve DOI: https://doi.org/10.1063/1.367488 |
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| Author | Search for: Liu, H. C.1; Search for: Buchanan, M.1; Search for: Wasilewski, Z. R.1 |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | aluminium compounds; dark conductivity; gallium arsenide; III-V semiconductors; indium compounds; infrared detectors; interface states; photoconductivity; photodetectors; semiconductor quantum wells |
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| Abstract | We explore the possibility of covering the short wavelength infrared region using intersubband transitions in GaAs-based quantum wells. We investigate InGaAs wells with AlAs thin confining barriers. For this type of double-barrier resonant-final-state detectors, the dark current decreases with increasing detection wavelength. Photocurrents due to intersubband transition are observed down to a wavelength of about 1μm. The spectra also reveal interesting physical effects apparently related to the indirect band minima at the X point. The responsivity for the 3–4μmm detectors reaches up to 0.01 A/W; and the background limited temperature is in the range of 80–100 K. |
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| Publication date | 1998-06-01 |
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| In | |
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| NPARC number | 12327856 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | e512c4b6-8b69-4b6c-bcdc-e4fc2f018b2d |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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