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Demonstration of an ion-implanted, wavelength-shifted quantum-well laser

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1109/68.475763
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Subjectbandgap shifting; blue shift; broad-area laser; fabrication; III-V semiconductors; indium compounds; InP; ion implantation; optical fabrication; quantum well lasers; quantum-well laser; spectral line shift; threshold current; wafer integration; wavelength shifting
Abstract
A technique for fabricating many different wavelength lasers on the same wafer has been developed. High energy ion implantation was used to selectively blue shift the emission wavelength of an InP-based quantum well laser structure. This structure was then processed into fully functional broad-area lasers whose current threshold was unaffected by the implantation process, indicating extremely high material quality after bandgap-shifting. This process has the potential for the integration of not only different wavelength lasers, but also other devices, such as waveguides, detectors, modulators, etc., on a single wafer.
Publication date
In
  • Photonics Technology Letters, IEEE 8, no. 1 (January 1996): 16–18.
LanguageEnglish
NPARC number12328778
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Record identifierdced8f91-23d5-45b9-8730-4fb7c3c339af
Record created2009-09-10
Record modified2020-03-20
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