| DOI | Resolve DOI: https://doi.org/10.1016/0168-583X(94)00510-9 |
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| Author | Search for: Ridgway, M. C.; Search for: Elliman, R. G.; Search for: Faith, M. E.; Search for: Kemeny, P. C.; Search for: Davies, M.1 |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | The application of high-energy ion implantation for electrical isolation of InP-based materials and devices is described and damage- and chemically-related compensation mechanisms are compared. The former is shown to result in excessive dark current in InGaAs/InP p-i-n photodiodes due to the low intrinsic resistivity of InGaAs and the presence of residual disorder. While chemically-related compensation minimizes residual disorder, the application of this technology is often limited by diffusion and/or the low solid solubility of the deep dopant as demonstrated in both Fe- and Au-implanted InP. |
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| Publication date | 1995-03-01 |
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| In | |
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| Language | English |
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| NPARC number | 12330165 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | da34a606-ef33-43bd-a76a-1107c8d9fdc6 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-29 |
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