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Silicon nitride integrated quantum photonics

DOIResolve DOI: https://doi.org/10.1109/ICTON59386.2023.10207494
AuthorSearch for: 1ORCID identifier: https://orcid.org/0000-0002-1394-1841; Search for: 1ORCID identifier: https://orcid.org/0000-0002-0513-8282; Search for: 1ORCID identifier: https://orcid.org/0000-0002-3524-5193; Search for: 2ORCID identifier: https://orcid.org/0000-0003-1902-9826; Search for: 1ORCID identifier: https://orcid.org/0000-0002-1569-387X; Search for: 1ORCID identifier: https://orcid.org/0000-0003-1220-2622; Search for: 1ORCID identifier: https://orcid.org/0000-0001-5163-7640; Search for: 1ORCID identifier: https://orcid.org/0000-0001-6204-3952; Search for: 1ORCID identifier: https://orcid.org/0009-0000-0541-5182
Affiliation
  1. National Research Council Canada. Quantum and Nanotechnologies
  2. National Research Council Canada. Metrology Research Centre
FormatText, Article
Conference2023 23rd International Conference on Transparent Optical Networks (ICTON), July 2-6, 2023, Bucharest, Romania
Subjectquantum dots; silicon nitride; single photons; indistinguishable photons; evanescent coupling; refractive index; optical fiber networks; quantum networks; indexes; optical waveguides; photonics
Abstract
In this paper, we present our work towards scalable quantum-tech solutions in a silicon-nitride platform. We show hybrid integration of single InAs quantum dots on a Si 3 N 4 waveguide and show that this hybridization process does not ruin the single emitter properties, and may even enhance them.
Publication date
PublisherIEEE
In
  • 2023 23rd International Conference on Transparent Optical Networks (ICTON), 10207494 (8 August 2023).
LanguageEnglish
Peer reviewedYes
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Record identifierd858b0f9-cd29-453d-b39f-a33f77f44985
Record created2024-11-05
Record modified2024-11-05

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