Inkjet printable and low annealing temperature gate-dielectric based on polymethylsilsesquioxane for flexible n-channel OFETs

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  1. National Research Council of Canada. Information and Communication Technologies
FormatText, Article
SubjectAnnealing; Dielectric materials; Electric fields; Gate dielectrics; Glass; Heterojunction bipolar transistors; High electron mobility transistors; Leakage currents; Organic field effect transistors; Reconfigurable hardware; Silver; Spin glass; Transistors; Flexible electronic devices; High breakdown voltage; High electric fields; N-channel transistors; Polymethylsilsesquioxane; Reproducibilities; Spin on glass; Field effect transistors
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Peer reviewedYes
NPARC number21277481
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Record identifierd7f07854-a362-4e1e-92d0-2310972cec54
Record created2016-03-09
Record modified2020-03-16
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