| Download | - View final version: Intense-laser solid state physics: unraveling the difference between semiconductors and dielectrics (PDF, 786 KB)
|
|---|
| DOI | Resolve DOI: https://doi.org/10.1103/PhysRevLett.118.173601 |
|---|
| Author | Search for: Mcdonald, C. R.; Search for: Vampa, G.; Search for: Corkum, P. B.1; Search for: Brabec, T. |
|---|
| Name affiliation | - National Research Council of Canada. Security and Disruptive Technologies
|
|---|
| Format | Text, Article |
|---|
| Abstract | Experiments on intense laser driven dielectrics have revealed population transfer to the conduction band to be oscillatory in time. This is in stark contrast to ionization in semiconductors and is currently unexplained. Current ionization theories neglect coupling between the valence and conduction band and therewith, the dynamic Stark shift. Our single-particle analysis identifies this as a potential reason for the different ionization behavior. The dynamic Stark shift increases the band gap with increasing laser intensities, thus suppressing ionization to an extent where virtual population oscillations become dominant. The dynamic Stark shift plays a role dominantly in dielectrics which, due to the larger band gap, can be exposed to significantly higher laser intensities. |
|---|
| Publication date | 2017-04-24 |
|---|
| Publisher | American Physical Society |
|---|
| In | |
|---|
| Language | English |
|---|
| Peer reviewed | Yes |
|---|
| NPARC number | 23003134 |
|---|
| Export citation | Export as RIS |
|---|
| Report a correction | Report a correction (opens in a new tab) |
|---|
| Record identifier | d3bb1bb4-8d3b-460e-8b00-bafe3502818e |
|---|
| Record created | 2018-04-27 |
|---|
| Record modified | 2020-05-30 |
|---|
