Intense-laser solid state physics: unraveling the difference between semiconductors and dielectrics

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DOIResolve DOI: https://doi.org/10.1103/PhysRevLett.118.173601
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  1. National Research Council of Canada. Security and Disruptive Technologies
FormatText, Article
Journal titlePhysical Review Letters
ISSN0031-9007
1079-7114
Volume118
Issue17
Article number173601
Abstract
Experiments on intense laser driven dielectrics have revealed population transfer to the conduction band to be oscillatory in time. This is in stark contrast to ionization in semiconductors and is currently unexplained. Current ionization theories neglect coupling between the valence and conduction band and therewith, the dynamic Stark shift. Our single-particle analysis identifies this as a potential reason for the different ionization behavior. The dynamic Stark shift increases the band gap with increasing laser intensities, thus suppressing ionization to an extent where virtual population oscillations become dominant. The dynamic Stark shift plays a role dominantly in dielectrics which, due to the larger band gap, can be exposed to significantly higher laser intensities.
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PublisherAmerican Physical Society
LanguageEnglish
Peer reviewedYes
NPARC number23003134
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