Ion transport and switching speed in redox-gated 3-terminal organic memory devices

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1149/2.0831412jes
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Affiliation
  1. National Research Council of Canada. National Institute for Nanotechnology
FormatText, Article
SubjectCarrier transport; Electrolytes; Field effect transistors; Polarons; Polyethylene oxides; Charging current; Device temperature; Electrolyte layers; Molecular memory devices; Organic memory devices; Oxide electrolytes; Rate-limiting process; Source and drain electrodes; Flash memory
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LanguageEnglish
Peer reviewedYes
NPARC number21275588
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Record identifierd39aff29-dd9e-4e2b-a5c1-2a3c9f9e76ea
Record created2015-07-14
Record modified2020-04-22
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