| DOI | Resolve DOI: https://doi.org/10.1063/1.361108 |
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| Author | Search for: McKinnon, W. R.1; Search for: McAlister, S. P.1; Search for: Abid, Z.1; Search for: Guzzo, E. E.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | BIPOLAR TRANSISTORS; CURRENT DENSITY; DIFFUSION LENGTH; FABRICATION; FERMI STATISTICS; GALLIUM ARSENIDES; HETEROSTRUCTURES; IMPURITIES; INDIUM ARSENIDES; INDIUM PHOSPHIDES |
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| Abstract | The one-flux analysis of double-heterostructure bipolar transistors with composite collectors in the preceding article W. R. McKinnon, J. Appl. Phys. 79, 2762 (1996) is compared to drift-diffusion calculations and to measurements on InP/InGaAs/InP/composite collectors-double heterostructure bipolar transistors. For quantitative agreement we include the effects of ionized impurities in the space-charge regions, and an approximate treatment of Fermi舑Dirac statistics. |
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| Publication date | 1996-03-01 |
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| In | |
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| Language | English |
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| NPARC number | 12330781 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | d014c67a-1f39-4b67-81dd-1c8d173861f2 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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