| Abstract | 2D semiconductors subject to localized strain represent an emerging, scalable platform for the generation of bright single-photon emitters. In this study, the observation of quantum emission from bilayer (BL) WSe₂ under varying 3D strain induced by dielectric nanopillars is reported. Spectrally narrow and bright photoluminescence along with antibunched photon statistics is observed, comparable to those of monolayer WSe₂, consistent with strain-mediated quantum emission via defect states. The results indicate that the brightest emitters are created with pillar diameters ranging from 175 to 195 nm. A robust second-order correlation function of g⁽²⁾(0) = 0.139 confirms strong antibunching, indicative of high-quality single-photon emission. These findings highlight the potential of using nanopillar arrays to manipulate the electronic states and quantum emission in transition metal dichalcogenide BLs, paving the way for future applications in quantum technologies. |
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