Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions

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  1. National Research Council of Canada. Information and Communication Technologies
FormatText, Article
SubjectIII–V semiconductors; Ion implantation; Primary and secondary defects; Hall effect; X-ray diffraction
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Peer reviewedYes
NPARC number23000819
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Record identifierce326f9d-5f08-48ef-94e2-4554edc3c8c9
Record created2016-10-17
Record modified2020-04-22
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