Dielectrophoretic integration of nanodevices with CMOS VLSI circuitry

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1109/TNANO.2006.869679
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SubjectBiCMOS integrated circuits; BiCMOS process; CMOS integrated circuits; CMOS VLSI circuitry; communications circuitry; Complementary metal; complementary metal-oxide; semiconductor circuitry design; cylindrical structures; dielectrophoresis (DEP); dielectrophoretic forces; dielectrophoretic integration; electrophoresis; elemental semiconductors; Ge-Si alloys; integrated circuit design; mixed-mode integrated circuits; nanodevices; nanosensors; nanostructure; nanotechnology; oxide; porous membranes; post-integrated-circuit assembly; semiconductor (CMOS); semiconductor materials; sensors; signal processing; silicon; Si-SiGe; very large scale integration (VLSI); VLSI
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LanguageEnglish
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NRC number11
NPARC number12339033
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