Quantum-well intermixing for optoelectronic integration using high energy ion implantation

From National Research Council Canada

DOI	Resolve DOI: https://doi.org/10.1063/1.359948
Author	Search for: Charbonneau, S.¹; Search for: Poole, P. J.¹; Search for: Piva, P. G.¹; Search for: Aers, G. C.¹; Search for: Koteles, E. S.¹; Search for: Fallahi, M.¹; Search for: He, J.-J.¹; Search for: McCaffrey, J. P.¹; Search for: Buchanan, M.¹; Search for: Dion, M.¹; Search for: Goldberg, R. D.; Search for: Mitchell, I. V.
Affiliation	National Research Council of Canada. NRC Institute for Microstructural Sciences
Format	Text, Article
Subject	absorption spectra; fabrication; gallium arsenides; heterostructures; indium arsenides; integrated optics; ion implantation; lasers; optoelectronic devices; photoluminescence; quantum wells
Abstract	The technique of ion-induced quantum-well (QW) intermixing using broad area, high energy (2–8 MeV As4+) ion implantation has been studied in a graded-index separate confinement heterostructure InGaAs/GaAs QW laser. This approach offers the prospect of a powerful and relatively simple fabrication technique for integrating optoelectronic devices. Parameters controlling the ion-induced QW intermixing, such as ion doses, fluxes, and energies, post-implantation annealing time, and temperature are investigated and optimized using optical characterization techniques such as photoluminescence, photoluminescence excitation, and absorption spectroscopy.
Publication date	1995-06-07
In	Journal Of Applied Physics 78, no. 6 (7 June 1995): 3697–3705.
Language	English
NPARC number	12333596
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Record identifier	cbd67fca-bd55-4420-b172-9e84dfa6bff5
Record created	2009-09-10
Record modified	2020-04-29

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