Structure of Hafnium silicate films formed by atomic layer deposition

DOI	Resolve DOI: https://doi.org/10.1149/1.3206616
Author	Search for: Liu, J.; Search for: Wu, X.¹; Search for: Lennard, W. N.; Search for: Landheer, D.¹
Name affiliation	National Research Council Canada. NRC Institute for Microstructural Sciences
Format	Text
Type	Article
Journal title	ECS Transactions
ISSN	1938-5862 1938-6737
Volume	25
Issue	6
Pages	163–172; # of pages: 10
Abstract	Hf distributions in as-grown and annealed (HfO2)0.25(SiO2)0.75 films with thicknesses in the range 4-13 nm were investigated by high resolution transmission electron microscopy (HRTEM), angle resolved X-ray photoelectron spectroscopy (ARXPS) and medium energy ion scattering (MEIS). HRTEM images show a layered structure in films thinner than 8 nm. ARXPS data also show a non-uniform distribution of Hf throughout the film depth. A diffusion of SiO2 to the film surface after a longer time anneal was observed by MEIS. All these observations provide evidence for surface-directed spinodal decomposition in the pseudobinary (HfO2)x(SiO2)1-x alloy system.
Publication date	2009
Language	English
Peer reviewed	Yes
NPARC number	21276871
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Record identifier	cb2f666e-e529-4ec1-91b3-b0a0c3877302
Record created	2015-10-27
Record modified	2016-05-09