Extracting nonradiative parameters in III–V semiconductors using double heterostructures on active p-n junctions
Extracting nonradiative parameters in III–V semiconductors using double heterostructures on active p-n junctions
DOI | Resolve DOI: https://doi.org/10.1109/JPHOTOV.2017.2777667 |
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Author | Search for: ; Search for: ; Search for: |
Format | Text, Article |
Subject | III–V semiconductors; luminescence coupling; modeling and simulation; radiative lifetime |
Abstract | |
Publication date | 2018-03 |
Publisher | IEEE |
In | |
Language | English |
Peer reviewed | Yes |
NRC publication | This is a non-NRC publication"Non-NRC publications" are publications authored by NRC employees prior to their employment by NRC. |
NPARC number | 23003619 |
Export citation | Export as RIS |
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Record identifier | c94a0f5c-c33b-49c9-a7b5-99a7230aeb08 |
Record created | 2018-07-25 |
Record modified | 2020-03-16 |
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