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Planar InGaP/GaAs HBTs for high speed optoelectronic circuit applications

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1049/el:19970015
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FormatText, Article
Subject10 Gbit/s; 18 GHz; 50 GHz; 70 GHz; CBE regrowth; decision circuit; dynamic frequency divider; extrinsic base layers; high speed integrated circuits; InGaP-GaAs; lightwave communications; OEIC; optoelectronic circuit applications; planar InGaP/GaAs HBTs; selective chemical beam epitaxial; self-aligned HBT fabrication process; subcollector layers
Abstract
A fully planar self-aligned HBT fabrication process based on selective chemical beam epitaxial (CBE) regrowth of both the extrinsic base and subcollector layers is reported. Using this technology, cutoff frequencies of 50 and 70 GHz for fT and fmax, respectively, have been achieved for In0.49Ga0.51P/GaAs HBTs with 9 � 4 �m2 emitter-base junction area. High speed integrated circuits for lightwave communications including a 10 Gbit/s decision circuit and an 18 GHz dynamic frequency divider were successfully fabricated using these planar HBTs.
Publication date
In
  • Electronics Letters 33, no. 1 (2 January 1997): 85–86.
LanguageEnglish
NRC publication
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"Non-NRC publications" are publications authored by NRC employees prior to their employment by NRC.

NPARC number12327756
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Record identifierc3cecfd3-7112-41eb-b245-515d4b7716d7
Record created2009-09-10
Record modified2020-03-20
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