| DOI | Resolve DOI: https://doi.org/10.1117/1.OE.57.1.011021 |
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| Author | Search for: Rassel, S. M. Shazzad; Search for: Li, Lu; Search for: Li, Yiyun; Search for: Yang, Rui Q.; Search for: Gupta, James A.1; Search for: Wu, Xiaohua1; Search for: Aers, Geof C.2 |
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| Affiliation | - National Research Council Canada. Advanced Electronics and Photonics
- National Research Council Canada. Security and Disruptive Technologies
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| Format | Text, Article |
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| Subject | interband cascade laser; type-II quantum well; midinfrared; InAs |
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| Abstract | InAs-based interband cascade (IC) lasers with improved optical confinement have achieved high-temperature operation with a threshold current density as low as 333 A∕cm2 at 300 K for emission at 6003 nm. The threshold current density is the lowest ever reported among semiconductor midinfrared lasers at similar wavelengths. These InAs-based IC devices lased in pulsed mode at temperatures up to 357 K near 6.28 μm. A narrow-ridge device was able to operate in continuous-wave mode at temperatures up to 293 K at 6.01 μm. |
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| Publication date | 2018-01-01 |
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| Publisher | Society of Photo-optical Instrumentation Engineers |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 23003691 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | c275458a-582c-487a-9b01-e41a91598629 |
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| Record created | 2018-07-31 |
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| Record modified | 2020-03-16 |
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