| Download | - View final version: Controlled coupling and occupation of silicon atomic quantum dots at room temperature (PDF, 707 KiB)
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| DOI | Resolve DOI: https://doi.org/10.1103/PhysRevLett.102.046805 |
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| Author | Search for: Haider, M. Baseer1; Search for: Pitters, Jason L.1; Search for: Dilabio, Gino A.1; Search for: Livadaru, Lucian1; Search for: Mutus, Josh Y.1; Search for: Wolkow, Robert A.1 |
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| Affiliation | - National Research Council of Canada. Nanotechnology
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| Format | Text, Article |
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| Abstract | It is demonstrated that the silicon atom dangling bond (DB) state serves as a quantum dot. Coulomb repulsion causes DBs separated by ≲ 2nm to exhibit reduced localized charge, which enables electron tunnel coupling of DBs. Scanning tunneling microscopy measurements and theoretical modeling reveal that fabrication geometry of multi-DB assemblies determines net occupation and tunnel coupling strength among dots. Electron occupation of DB assemblies can be controlled at room temperature. Electrostatic control over charge distribution within assemblies is demonstrated. |
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| Publication date | 2009-01-27 |
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| Publisher | American Physical Society |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 23004619 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | c1c6c407-12ec-447d-bf38-23a5ee6ab935 |
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| Record created | 2018-11-28 |
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| Record modified | 2020-05-30 |
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