| DOI | Resolve DOI: https://doi.org/10.1557/PROC-798-Y5.67 |
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| Author | Search for: Tay, Li-Lin1; Search for: Lockwood, David J.1; Search for: Gupta, James A.1; Search for: Wasilewski, Zbig R.1 |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | 2003 MRS Fall Meeting - Symposium Y – GaN and Related Alloys, 1-5 December 2003, Boston, Massachusetts, USA |
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| Abstract | Pseudomorphically strained epitaxial films of the ternary alloy GaNyAs1-y have been grown on GaAs(100) with y ranging from 0 to 0.05. The optical phonon Raman spectrum of the alloy displays a two-mode behavior. The GaAs-like first order modes are represented at y = 0.05 by the strong longitudinal optic (LO1) mode at 288.5 cm-1 and the weaker transverse optic (TO1) mode at 268.3 cm-1, while the GaN-like LO2 mode is observed at 474.8 cm-1. Two very broad disorder-induced acoustic bands are evident at 80 and 170 cm-1 due to atomic disorder within the crystalline network. Raman studies show that as the nitrogen concentration increases, the GaAs-like LO1 band shifts linearly towards lower wavenumber while the GaN-like LO2 phonon band displays a sub-linear increase in wavenumber. Raman results for the unstrained quaternary alloy In0.06Ga0.94N0.02As0.98 are compared with those of GaN0.02As0.98. |
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| Publication date | 2004 |
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| Language | English |
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| NPARC number | 12346656 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | c0f89f29-b13e-43ce-ad94-b0298f7f24e4 |
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| Record created | 2009-09-17 |
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| Record modified | 2020-04-17 |
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