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Plasma-assisted MBE growth of GaN on GaN/sahire templates grown in situ by ammonia- MBE

From National Research Council Canada

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Affiliation
  1. National Research Council Canada. NRC Institute for Microstructural Sciences
  2. National Research Council Canada. NRC Steacie Institute for Molecular Sciences
FormatText, Article
Conference206th Meeting of the Electrochemical Society, 3-8 October 2004, Honolulu, Hawaii, USA
Publication date
In
  • State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V 2004, no. 6 (2004): 215–226.
NoteFifth Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics and 41st State-of-the-Art Program on Compound Semiconductors Symposia
LanguageEnglish
Peer reviewedYes
NPARC number12346299
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Record identifierbff2ccf7-7e9d-4168-be30-502c8a8f8e47
Record created2009-09-17
Record modified2020-04-17
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