| DOI | Resolve DOI: https://doi.org/10.12693/APhysPolA.106.367 |
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| Author | Search for: Wysmolek, A.; Search for: Chwalisz, B.; Search for: Potemski, M.; Search for: Stepniewski, R.; Search for: Babinski, Adam1; Search for: Raymond, S.; Search for: Thierry-Mieg, V. |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | The nature of sharp emission lines which are present in macro-luminescence experiments on a type-II GaAs/AlAs double quantum well structure is discussed. The experiments, which also include micro-lumines- cence measurements, allowed us to conclude that the sharp emission lines observed originate from lateral GaAlAs islands of a fewmum in diameter. They serve as efficient type-I recombination centers for indirect excitons and/or carriers which diffuse in the GaAs/AlAs QW structure and strongly affect the emission processes observed in macro-luminescence experiments. These traps can easily be filled with electron--hole pairs, giving rise to the formation of neutral excitons as well as more complex excitonic molecules. Magneto-luminescence spectra from single islands resemble those observed for natural quantum dots formed in narrow GaAs quantum wells. |
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| Publication date | 2004 |
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| In | |
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| Peer reviewed | Yes |
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| NPARC number | 12346377 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | bd332ed4-12d1-4912-b99f-bb9902a2d3f7 |
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| Record created | 2009-09-17 |
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| Record modified | 2020-04-17 |
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