| DOI | Resolve DOI: https://doi.org/10.1134/1.1569020 |
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| Author | Search for: Goupalov, S. V.; Search for: Lavallard, P.; Search for: Lamouche, G.1ORCID identifier: https://orcid.org/0000-0002-9831-8273; Search for: Citrin, D. S. |
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| Affiliation | - National Research Council Canada. NRC Industrial Materials Institute
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| Format | Text, Article |
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| Abstract | We show that the contribution to the fine structure of the ground exciton level in a semiconductor nanocrystal due to the long-range part of the electron-hole exchange interaction can be equivalently described as arising from the mechanical exciton interaction with the exciton-induced macroscopic longitudinal electric field. Particular cases of nanocrystals with cubic and wurtzite crystal lattice in the strong confinement regime are studied taking into account the complex structure of the valence band. A simplified model accounting for the exciton ground-level splitting and exploiting an effective local scalar susceptibility is established. |
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| Publication date | 2003-04 |
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| Publisher | Springer |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | bb5cf97c-4d45-46e3-96c3-368bedd69a72 |
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| Record created | 2024-08-19 |
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| Record modified | 2024-08-20 |
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