| DOI | Resolve DOI: https://doi.org/10.1117/12.206336 |
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| Author | Search for: Norman, Carl E.; Search for: Pratt, A. R.; Search for: Fahy, M. R.; Search for: Williams, Robin L.; Search for: Marinopoulou, A.; Search for: Chatenoud, F.1 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Conference | Circular-grating light-emitting sources, San Jose, California, USA, February 6, 1995 |
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| Abstract | The phenomenon of indium migration off the sidewalls of features on patterned GaAs substrates during MBE growth has been studied. The level of migration depends strongly on the arsenic flux and the growth temperature. Modulating the arsenic flux during the growth of multilayer structures allows the number of active quantum wells to vary from one region of a device to another. |
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| Publication date | 1995 |
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| In | |
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| Series | |
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| Language | English |
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| NPARC number | 12337959 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | b937120b-7784-4964-9461-e1a49c778a58 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-29 |
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