| DOI | Resolve DOI: https://doi.org/10.1080/01418639408240242 |
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| Author | Search for: Chen, Wei; Search for: Maris, Humphrey; Search for: Wasilewski, Zbigniew R1; Search for: Tamura, Shin-Ichiro |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | We have used a novel method to measure the attenuation and velocity of 56 GHz longitudinal phonons in GaAs over the temperature range from 50 to 300 K. The sample was a molecular-beam-epitaxy-grown layer separated from the substrate by a GaAs/AlAs multilayer structure that acted as a resonant reflector for the phonons. We discuss the results in terms of theories of the phonon-phonon interaction. |
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| Publication date | 1994-09 |
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| In | |
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| Language | English |
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| NPARC number | 12337703 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | b8bcb830-47ec-470b-ac40-b219192db6e0 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-27 |
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