Ultrahigh-resolution photoluminescence studies of excitons bound to boron in silicon under uniaxial stress
Ultrahigh-resolution photoluminescence studies of excitons bound to boron in silicon under uniaxial stress
| DOI | Resolve DOI: https://doi.org/10.1103/PhysRevB.45.11736 |
|---|---|
| Author | Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: |
| Format | Text, Article |
| Publication date | 1992-05-15 |
| In | |
| Language | English |
| Peer reviewed | Yes |
| NRC number | NRC-INMS-26 |
| NPARC number | 8898072 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | b00bbe36-a84f-4f89-a4f5-7bb2eb9b3360 |
| Record created | 2009-04-22 |
| Record modified | 2020-04-24 |
- Date modified: