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The peak and average temperature in a self-heated GaN HFET

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1016/j.sse.2006.11.001
AuthorSearch for: 1
Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Publication date
In
  • Solid State Electronics 51, no. 1 (2007): 142–146.
NPARC number12744832
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Record identifierafe30469-33f3-4a07-8e42-e11355dcb384
Record created2009-10-27
Record modified2020-05-10
Date modified: