| DOI | Resolve DOI: https://doi.org/10.1149/1.1836699 |
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| Author | Search for: Landheer, Dolf1; Search for: Tao, Ye1; Search for: Hulse, John1; Search for: Quance, Terrence1; Search for: Xu, D-X |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | chemical vapour deposition; cyclotron resonance; Fourier transform spectroscopy; nitridation; oxygen compounds; plasma deposited coatings; plasma diagnostics; silicon compounds |
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| Abstract | High-quality silicon dioxide films with nitrogen at the Si/SiO2 interface have been produced by plasma-enhanced chemical vapor deposition using an electron-cyclotron resonance source with silane and nitrous oxide. The nitride layer, which amounts to approximately one monolayer, is produced by a plasma nitridation process that dominates over chemical vapor deposition during the initial stages of growth. X-ray photoelectron spectroscopy has been used to show that the nitrogen atoms are bonded to three silicon atoms and the N[Single Bond]O bond concentration is below the detection limit. Fourier transform infrared spectroscopy indicates that the films have excellent bulk properties. Interface state densities of 2 � 1011 eV�1 cm�2 have been obtained by capacitance-voltage analysis of aluminum capacitors. We discuss the prospects for reducing this level by optimizing the process. |
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| Publication date | 1996-04-30 |
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| In | |
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| NPARC number | 12328299 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | aeecfb9c-8ce9-4c94-9759-ddb25237a8b8 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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