The mechanism of photoenhanced wet etching of GaN

Author	Search for: Bardwell, J. A.¹; Search for: Webb, J. B.¹; Search for: Tang, H.¹; Search for: Fraser, J.¹; Search for: Moisa, S.¹
Affiliation	National Research Council Canada. NRC Institute for Microstructural Sciences
Format	Text, Article
Conference	Symposium on III-Nitride Based Semiconductor Electronic and Optical Devices and the 34th State-of-the-Art Program on compound Semiconductors (SOTAPOCS XXXVI), 25-30 March 2001, Washington, DC, USA
Publication date	2001
In	III-Nitride Based Semiconductor Electronic and Optical Devices and Thirty-fourth State-of-the-Art Program on compound Semiconductors (SOTAPOCS XXXVI) (2001): 193–203.
Series	Electrochemical Society Proceedings 2001-1.
Language	English
NPARC number	12327408
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Record identifier	ae2ddb92-f6cb-424f-9328-159f75e05f00
Record created	2009-09-10
Record modified	2020-03-27

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