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The mechanism of photoenhanced wet etching of GaN

From National Research Council Canada

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Affiliation
  1. National Research Council Canada. NRC Institute for Microstructural Sciences
FormatText, Article
ConferenceSymposium on III-Nitride Based Semiconductor Electronic and Optical Devices and the 34th State-of-the-Art Program on compound Semiconductors (SOTAPOCS XXXVI), 25-30 March 2001, Washington, DC, USA
Publication date
In
  • III-Nitride Based Semiconductor Electronic and Optical Devices and Thirty-fourth State-of-the-Art Program on compound Semiconductors (SOTAPOCS XXXVI) (2001): 193–203.
Series
  • Electrochemical Society Proceedings 2001-1.
LanguageEnglish
NPARC number12327408
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Record identifierae2ddb92-f6cb-424f-9328-159f75e05f00
Record created2009-09-10
Record modified2020-03-27
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