| DOI | Resolve DOI: https://doi.org/10.1063/1.366644 |
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| Author | Search for: Liu, H. C.1; Search for: Li, L.1; Search for: Buchanan, M.1; Search for: Wasilewski, Z. R.1; Search for: Brown, G. J.; Search for: Szmulowicz, F.; Search for: Hegde, S. M. |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | aluminium compounds; dark conductivity; gallium arsenide; III-V semiconductors; infrared detectors; photodetectors; semiconductor quantum wells |
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| Abstract | We report on a systematic study of a set of GaAs/AlGaAs p-type quantum well infrared photodetectors with varying barrier heights. The detector cutoff wavelength decreases with increasing barrier height. Experimental photoresponse spectra are in good agreement with calculated ground-state to continuum absorption spectra, based on a multiband envelope-function model. The measured dark current decreases with increasing barrier height. An estimate of the low-field dark current gives good agreement with the measured dark current. |
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| Publication date | 1998-01-01 |
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| In | |
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| NPARC number | 12334523 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | a7855219-771a-41f8-8896-b9b46c15bd7a |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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