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Growth of GaN/AlGaN HFETs on SiC substrates with optimized electrical characteristics using the ammonia-MBE technique

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1002/1521-396X(200212)194:2<439::AID-PSSA439>3.0.CO;2-3
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Affiliation
  1. National Research Council of Canada. NRC Institute for Microstructural Sciences
FormatText, Article
Abstract
Optimization of the electrical characteristics of GaN/AlGaN HFETs grown on SiC substrates by ammonia‐MBE is reported. By optimizing the growth conditions, GaN/AlGaN HFETs with room temperature mobilities of ∼1000 cm²/Vs and electron sheet densities of up to 1.9 × 10¹³ cm⁻² have been grown on SiC substrates with good reproducibility. These characteristics are comparable to the best characteristics of the GaN/AlGaN HFETs grown on sapphire. Devices fabricated from these optimized HFET layers showed excellent characteristics, e.g. maximum drain current density of 1.3 A/mm, fₜ of 70 GHz, fₘₐₓ of 130 GHz were measured for devices with 0.25 μm gate length and 100 μm gate width.
Publication date
PublisherWiley
In
  • Physica Status Solidi A: Applications and Materials Science 194, no. 2 (4 December 2002): 439–442.
LanguageEnglish
Peer reviewedYes
NPARC number12339271
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Record identifiera5c5eaa9-f29c-451b-98f8-c9f7b671a3ac
Record created2009-09-11
Record modified2022-03-10
Date modified: