Measuring strain fields surrounding grain-boundary dislocations in silicon using scanning transmission electron microscopy

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1017/S1431927614006965
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  1. National Research Council of Canada. Energy, Mining and Environment
FormatText, Article
ConferenceMicroscopy and Microanalysis 2014, M and M 2014, 3 August 2014 through 7 August 2014
Publication date
In
  • Microscopy and Microanalysis 20, no. 3 (24 August 2014): 1048–1049.
LanguageEnglish
Peer reviewedYes
NPARC number21275528
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Record created2015-07-14
Record modified2020-04-22
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