Measuring strain fields surrounding grain-boundary dislocations in silicon using scanning transmission electron microscopy
Measuring strain fields surrounding grain-boundary dislocations in silicon using scanning transmission electron microscopy
DOI | Resolve DOI: https://doi.org/10.1017/S1431927614006965 |
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Author | Search for: Couillard, Martin1 |
Name affiliation |
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Format | Text, Article |
Proceedings title | Microscopy and Microanalysis |
Conference | Microscopy and Microanalysis 2014, M and M 2014, 3 August 2014 through 7 August 2014 |
ISSN | 1431-9276 |
Volume | 20 |
Issue | 3 |
Pages | 1048–1049 |
Publication date | 2014-08-24 |
Publisher | Cambridge University Press |
Language | English |
Peer reviewed | Yes |
NPARC number | 21275528 |
Export citation | Export as RIS |
Report a correction | Report a correction | Record identifier | a51f9b4d-8d4e-4c55-b45e-63033d87121d |
Record created | 2015-07-14 |
Record modified | 2020-04-22 |