| DOI | Resolve DOI: https://doi.org/10.1016/j.apsusc.2005.05.031 |
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| Author | Search for: Tang, Y.H.; Search for: Sham, T.-K.; Search for: Yang, D.1; Search for: Xue, L.1 |
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| Affiliation | - National Research Council of Canada. NRC Industrial Materials Institute
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| Format | Text, Article |
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| Subject | pulsed laser deposition; SiC film; Si K-edge |
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| Abstract | Si K-edge XAFS was used to characterize a stoichiometric SiC film prepared by pulsed KrF laser deposition. The film was deposited on a p-type Si(1 0 0) wafer at a substrate temperature of 250 °C in high vacuum with a laser fluence of ∼5 J/cm2. The results reveal that the film contains mainly a SiC phase with an amorphous structure in which the Si atoms are bonded to C atoms in its first shell similar to that of crystalline SiC powder but with significant disorder. |
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| Publication date | 2006-03-15 |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 21275995 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 9ea70817-512b-4462-9dc6-9f79461dcfa2 |
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| Record created | 2015-09-04 |
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| Record modified | 2020-04-22 |
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