Growth of SiO2 at the Sc2O3/Si100 interface during annealing
Growth of SiO2 at the Sc2O3/Si100 interface during annealing
| Alternative title | Silicon Nitride and Silicon Dioxide Thin Films VII |
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| Author | Search for: ; Search for: ; Search for: 1; Search for: ; Search for: ; Search for: ; Search for: |
| Affiliation |
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| Format | Text, Article |
| Conference | Spring ECS Meeting, March 23-April 1, 2003, Paris, France |
| NPARC number | 12346215 |
| Export citation | Export as RIS |
| Report a correction | Report a correction (opens in a new tab) |
| Record identifier | 9dcca308-697d-453c-afdd-1f78b51a0bef |
| Record created | 2009-09-17 |
| Record modified | 2020-04-16 |
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