Gadolinium oxide and amorphous silicate films deposited on Si(100) by electron-beam evaporation: stability and diffusion

Author	Search for: Landheer, D.¹; Search for: Gupta, J. A.¹; Search for: Wu, X.¹; Search for: Sproule, G. I.¹; Search for: Moisa, S.¹; Search for: Quance, T.¹; Search for: Graham, M. J.¹; Search for: Baumvol, I. J. R.; Search for: Morais, J.; Search for: Lennard, W. N.
Affiliation	National Research Council Canada. NRC Institute for Microstructural Sciences
Format	Text, Article
Conference	Materials Research Society Workshop Series: International Workshop on Devices Technology: Alternatives to SiO2 as Gate Dielectric for Future Si-Based Microelectronics, 3-5 September 2001
Language	English
NPARC number	12346177
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Record identifier	9a955279-55ed-4dc8-9a67-2f024bd4d93d
Record created	2009-09-17
Record modified	2020-04-16

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