Synthesis of samarium oxide films by pulsed laser deposition

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DOI	Resolve DOI: https://doi.org/10.1557/PROC-780-Y1.3
Author	Search for: Yang, Dongfang¹; Search for: Xue, Lijue¹
Affiliation	National Research Council of Canada. NRC Industrial Materials Institute
Format	Text, Article
Conference	2003 Materials Research Society Spring Meeting, April 21-25, San Francisco, CA
Abstract	Uniform Samarium oxide (Sm₂O₃) films were grown on 75-mm diameter silicon wafers by the pulsed laser deposition (PLD) technique. The beam of a KrF excimer laser was used to ablate an Sm₂O₃ target in an oxygen pressure of 30 mTorr. The crystal structure, surface morphology and optical properties of Sm₂O₃ films deposited at a temperature range of 25∼680°C were determined by XRD, FE-SEM, and spectra reflectance respectively. Monoclinic structure was the predominant phase for Sm₂O₃ films deposited at temperatures of 680°C and 400°C. Amorphous or partially crystallized amorphous phase was observed at deposition temperatures of 25°C and 200°C. The Sm₂O₃ film deposited at 680°C is very dense, while films deposited at lower temperatures have higher porosity. The values of index of refraction, n, and extinction coefficient, k, at λ = 633 nm are 1.867 and 0.0660, respectively, for the 680°C film, and are in a range of 1.5∼1.6 and 0.01∼0.04 respectively for films deposited at lower temperatures.
Publication date	2003-04-21
Publisher	Materials Research Society; Cambridge University Press Springer
Series	MRS Online Proceedings 780, no. 13 (1 February 2004).
Language	English
Peer reviewed	Yes
NPARC number	21272522
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Record identifier	9a7a467a-1209-4369-8b2b-db1992b44b10
Record created	2014-12-01
Record modified	2024-02-21

Date modified:: 2024-05-02