| DOI | Resolve DOI: https://doi.org/10.1103/PhysRevLett.75.866 |
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| Author | Search for: Houghton, D. C.1; Search for: Aers, G. C.1; Search for: Yang, S.-R. Eric; Search for: Wang, E.2; Search for: Rowell, N. L.2 |
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| Affiliation | - National Research Council of Canada. NRC Institute for Microstructural Sciences
- National Research Council of Canada. NRC Institute for National Measurement Standards
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| Format | Text, Article |
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| Abstract | We present experimental verification of a type I conduction band alignment for coherently strained Si1-xGex layers in (001) silicon, with 0.15?x?0.38. A novel substrate bending scheme is used to apply in-plane uniaxial compressive and tensile stress along the [100] and [110] directions. Band edge photoluminescence from SiGe and Si is shifted with stress in accordance with deformation potential theory. Tensile stress along [110] allows clear distinction between types I and II band alignment where the predicted shifts are in opposite directions. |
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| Publication date | 1995-07-31 |
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| In | |
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| Language | English |
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| NPARC number | 12328370 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 9793c82e-e478-49d9-b668-bc7e80ae4462 |
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| Record created | 2009-09-10 |
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| Record modified | 2020-04-29 |
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