| DOI | Resolve DOI: https://doi.org/10.1557/PROC-533-235 |
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| Author | Search for: Rowell, N. L.1; Search for: Williams, R. L.2; Search for: Aers, G. C.2; Search for: Lafontaine, H.; Search for: Houghton, D. C.; Search for: Brunner, K.; Search for: Eberl, K.; Search for: Schmidt, O.; Search for: Winter, W. |
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| Affiliation | - National Research Council Canada. NRC Institute for National Measurement Standards
- National Research Council Canada. NRC Institute for Microstructural Sciences
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| Sponsor | Search for: MRS |
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| Format | Text, Article |
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| Conference | 1998 MRS Spring Meeting - Symposium FF – Epitaxy & Applications of Si-Based Heterostructures, 13-17 April 1998, San Francisco, California, USA |
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| Abstract | Recent low-temperature photoluminescence (PL) studies will be discussed for coherent Si1-xGex. and Si1-xGexCy alloy multiple quantum wells on Si (001) substrates grown by either ultra-high vacuum chemical vapour deposition or solid source molecular beam epitaxy. An in-plane applied-stress technique will be described which removes systematically band edge degeneracies revealing the lower, PL-active CB. Applied-stress data taken with this technique at ultra-low excitation intensity proved intrinsic type II CB alignment in SiGe on Si (001). Apparent type I alignment observed at higher intensity will also be discussed. New applied stress PL results are presented for Si1-x-yGexCy quantum wells under various grown-in stress condition |
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| Language | English |
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| Peer reviewed | Yes |
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| NRC number | NRC-INMS-1195 |
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| NPARC number | 8899590 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 95b4f0e2-58ac-4cb2-afc9-30b603a49284 |
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| Record created | 2009-04-22 |
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| Record modified | 2020-04-16 |
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