| DOI | Resolve DOI: https://doi.org/10.1063/1.119058 |
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| Author | Search for: Allard, L. B.1; Search for: Liu, H. C.1; Search for: Buchanan, M.1; Search for: Wasilewski, Z. R.1 |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Subject | aluminium compounds; CCD image sensors; gallium arsenide; III-V semiconductors; indium compounds; infrared detectors; infrared imaging; integrated optoelectronics; light emitting diodes; optical frequency conversion; photodetectors; semiconductor epitaxial layers; semiconductor quantum wells |
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| Abstract | We present experimental results which support a recently proposed scheme for infrared imaging through the combined use of a photon frequency up-conversion device with a charge coupled device (CCD) camera. The epitaxial device consists of a long wavelength p-type GaAs/AlGaAs quantum well infrared photodetector (QWIP) on top of which is grown a shorter wavelength InGaAs/GaAs light emitting diode (LED). Upon long wavelength infrared excitation of the QWIP, near infrared light is generated by the LED whose output is directed towards a commercial CCD array where the up-converted image of the long wavelength infrared source object is formed. |
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| Publication date | 1997-05-26 |
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| In | |
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| Language | English |
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| NPARC number | 12337918 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 9041a654-91cd-4e59-9ecd-6a6aa868dc7e |
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| Record created | 2009-09-10 |
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| Record modified | 2020-03-20 |
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