Language selection

Government of Canada / Gouvernement du Canada

Search

Growth of high performance GaN modulation-doped field-effect transisters by ammonia-molecular-beam-epitaxy

From National Research Council Canada

DOIResolve DOI: https://doi.org/10.1116/1.582255
AuthorSearch for: 1; Search for: 2; Search for: 1; Search for:
Affiliation
  1. National Research Council Canada. NRC Institute for Microstructural Sciences
  2. National Research Council Canada. NRC Steacie Institute for Molecular Sciences
FormatText, Article
Publication date
In
  • Journal of Vacuum Science & Technology A 18, no. 2 (2000): 652–655.
NPARC number12338042
Export citationExport as RIS
Report a correctionReport a correction (opens in a new tab)
Record identifier8b498b96-4402-4912-be82-62440bdd32c0
Record created2009-09-10
Record modified2020-03-26
Date modified: