| Download | - View author's version: Modeling of ultrafast metal–semiconductor–metal photodetectors (PDF, 24.1 MiB)
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| DOI | Resolve DOI: https://doi.org/10.1139/p91-085 |
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| Author | Search for: Landheer, D.1; Search for: Li, Z.-M.1; Search for: Mcalister, S. P.1; Search for: Aruliah, D. A. |
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| Affiliation | - National Research Council Canada. NRC Institute for Microstructural Sciences
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| Format | Text, Article |
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| Abstract | We have simulated the transient response of metal–semiconductor–metal (MSM) photodetectors to an optical impulse, using a two-dimensional (2-D) drift-diffusion model that incorporates deep traps and appropriate boundary conditions. We incorporate the external circuit using a method originally developed to describe photoconductors in transmission lines. Initially a one-dimensional (1-D) simulation is used to verify our model comparing our results to previous 1-D calculations and experimental results for GaAs MSM detectors. Then a full 2-D analysis is used to predict the performance of a novel MSM wave-guide photodetector whose structure incorporates a Si–Si0.5Ge0.5 strained-layer superlattice. We show that this device can have a response as fast as 50 ps, although pulse pile-up due to slow diffusion of carriers may be a problem at high duty cycles. |
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| Publication date | 1991-03 |
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| Publisher | National Research Council of Canada. NRC Research Press |
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| In | |
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| Language | English |
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| Peer reviewed | Yes |
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| NPARC number | 23003879 |
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| Export citation | Export as RIS |
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| Report a correction | Report a correction (opens in a new tab) |
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| Record identifier | 8a173fb3-14aa-4f69-828c-82c033e48c09 |
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| Record created | 2018-08-20 |
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| Record modified | 2023-01-05 |
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